This is in part due to the need for an ideal oxide-semiconductor interface with low surface-state density, but also because of the extremely thin oxides that are currently used for sub-micron MOSFETs.

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Two techniques are commonly used to form silicon dioxide: One involves the oxidation of the silicon yielding a thermal oxide. The thermal oxidation of silicon is obtained by heating silicon in an oxygen or water vapor ambient. The oxidation of a silicon surface also occurs at room temperature but the resulting 3 nm layer of oxide limits any further oxidation.

At high temperatures, oxygen or water molecules can easily diffuse through the oxide so that further oxidation takes place.

Thermal oxidation provides a high quality interface and oxide. It is used less these days because of the high process temperature.

The deposition of SiO 2 using a CVD process is one where two gases, such as silane and oxygen, react to form silicondioxide, which then sublimes onto any solid surface. The lower process temperature and the quality of the deposited layers make CVD deposition the preferred method to fabricate MOS oxides.The Infona portal uses cookies, i.

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The electron interface trap density near the conduction band has been evaluated with different techniques both on MOS capacitors and MOSFET devices; a good agreement among the measured values has been attained. Authors Close.

mos capacitors obtained by wet oxidation of n

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Abstract Germanium MOS capacitors with high-quality gate dielectrics are fabricated by novel processing in wet ambients. As compared to dry NO oxidation, negligible growth of unstable GeO x interlayer and thus a near-perfect GeON dielectric can be obtained. This idea is extended to high-k gate dielectric HfTiONwhich is prepared by reactive co-sputtering followed by wet N 2 annealing.

As a result, the properties of Ge MOS capacitors prepared in wet ambient are greatly improved with lower interface-state and oxide-charge densities, and reduced gate leakage current. All these should be attributed to the hydrolysable property of GeO x in water-containing ambient. Authors Close.

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Are you sure? Yes No. Keywords wetting annealing germanium compounds hafnium compounds leakage currents MOS capacitors MOSFET sputtering titanium compounds HfTiON-Ge gate dielectrics wet ambients high-k gate dielectric reactive co-sputtering low interface-state density low oxide-charge density gate leakage current reduction hydrolysable property water-containing ambient GeON wetting annealing germanium compounds hafnium compounds leakage currents MOS capacitors MOSFET sputtering titanium compounds HfTiON-Ge gate dielectrics wet ambients high-k gate dielectric reactive co-sputtering low interface-state density low oxide-charge density gate leakage current reduction hydrolysable property water-containing ambient GeON.

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Email Address. Sign In. Deep interface states and fixed oxide charges were mainly discussed. The wet atmosphere was effective to reduce a negative flatband shift caused by deep donor-type interface states in p-type SiC MOS capacitors. Negative fixed charges, however, appeared near the interface during wet reoxidation anneal.

The relation between interface properties and characteristics of n-channel planar 6H-SiC metal-oxide-semiconductor field effect transistors MOSFETs was also investigated. The threshold voltage of MOSFETs processed by wet reoxidation anneal was higher than that of without reoxidation anneal. A clear relation between the threshold voltage and the channel mobility was observed in MOSFETs fabricated on the same substrate.

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Mod-01 Lec-13 Thermal Oxidation of Silicons

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mos capacitors obtained by wet oxidation of n

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mos capacitors obtained by wet oxidation of n

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